🚀 go-pugleaf

	MCNC has the following Technical Reports available:

	TR90-25  "Further Comments on the Thermal Etching of Silicon
	[The Surface Morphology of (100), (111), & (110) Wafers in
	the Temperature Range 900-1150C]"  by A. Reisman, D. Temple,
	P. L. Smith

	TR90-26  "The Susceptibility of Sicion-Ion-Implanted Gate
	Insulators to X-ray Radiation-Induced Defect Generation"  by
	C. T. Sune, A. Reisman, C. K. Williams

	TR90-27  "Conservation & Filling of Neutral Hole Traps in
	SiO2 during Ionizing Radiation Exposure"  by L. Lipkin,
	A. Reisman, C. K. Williams

	TR90-28  "Challenges & Priorities For Two-Dimensional Process
	Simulation"  by R. B. Fair

	TR90-29  "Modeling the Enhanced Diffusion of Implanted Boron
	in Silicon"  by Yudong Kim, Teh Y. Tan, Hisham Z. Massoud,
	R. B. Fair

	TR90-30  "Physical Modeling of the Time Constraint of Transient
	Enhancement in the Diffusion of Ion-Implanted Dopants in
	Silicon"  by Yudong Kim, Hisham Z. Massoud, Ulrich M. Gosele,
	Richard B. Fair

	TR90-31  "A VHDL Parser in Prolog"  by Peter B. Reintjes

	TR90-32  "Built-In Self-Test with Weighted Random Pattern
	Hardware"  by Franc Brglez, Clay Gloster, Gershon Kedem

	TR90-33  "A Technique for Preparing 'Two In One' Cross-
	Sectional TEM Specimens"  by Guang-Hwa Ma, Sopa Chevacharoenkul

	TR90-34  "Efficient AC Analysis in CAzM"  by Donald J. Erdman,
	Steve Kenkel, Gary Nifong

	TR90-35  "Modeling the Enhanced Diffusion of Implanted Boron
	in Silicon"  by Yudong Kim, Teh Y. Tan, Hisham Z. Massoud,
	Richard B. Fair 

		For a copy of any MCNC Technical Report, please
		contact the MCNC library at 919/248-1983;
		PO Box 12889, RTP, NC  27709
		or send mail to Marti Moser, marti@mcnc.org.