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Article #7023.3V v/s 5V
From: Shailendra Save
Date: Thu, 23 May 1991 17:51
Date: Thu, 23 May 1991 17:51
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960 bytes
In this week's Electronic Engineering Times (May 20th issue) there is an article about AT&T developing a 3.3V cell library. On pp 16, (bottom 2nd column) they claim: The basic 2 input NAND-gate power rating is 6.1uW/MHz at 5V dropping to 1.1uW/MHz at 3.3V I am missing something here. If it is a CV^2 relationship, it should be approx. 2.5 and not 1.1 Could some knowledgeable person please tell me how this claim is true? Do they use a different process? Shailendra ssave@caen.engin.umich.edu sumax!ole.uucp!ssave
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arc1-ca.pugleaf.net!utzoo!utgpu!news-server.csri.toronto.edu!cs.utexas.edu!uwm.edu!caen!dali.cs.montana.edu!milton!sumax!polari!thebes!ole!ssaveShow Full Headers
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Path: arc1-ca.pugleaf.net!utzoo!utgpu!news-server.csri.toronto.edu!cs.utexas.edu!uwm.edu!caen!dali.cs.montana.edu!milton!sumax!polari!thebes!ole!ssave From: ssave@ole.UUCP (Shailendra Save) Newsgroups: comp.lsi.cad,comp.lsi,sci.electronics Subject: 3.3V v/s 5V Keywords: Vdd. 3.3v Message-ID: <1956@ole.UUCP> Date: 23 May 91 17:51:43 GMT Organization: Seattle Silicon Corp., Bellevue, WA. Lines: 16