Article View: comp.lsi
Article #1322Re: A Question On Biasing Circuits
From: Blair P. Houghton
Date: Sun, 04 Mar 1990 20:04
Date: Sun, 04 Mar 1990 20:04
45 lines
1543 bytes
1543 bytes
In article <4025@mit-caf.MIT.EDU> shers@mit-caf.UUCP
(Alexander The Great Sherstinsky) writes:
>Vi C
>----||----*-- Vo
> |
> /
> \ R
> /
> \
> |
> GND
[...and asks how to bias this highpass so that Vo is about Supply/2...]
That's the AC model. The DC model can look like:
Vdd
|
/
\ 2R
/
\
Vi C |
----||----*-- Vo (Now Vo == Vdd/2)
|
/
\ 2R
/
\
|
GND
Which is the answer.
There's a problem if you use turned-off enhancement FET's
for the 2R values, in that process control is very spotty
(and of limited economic value) in CMOS, and the pullup's
off-impedance may be an order of magnitude different from
the pulldown's, and good luck predicting which way.
Now, if you've got an _analog_ CMOS line on which to
produce these chips, or a process engineer who doesn't
mind a few days of knob-twiddling...
--Blair
"Them's the breaks."
Technical Details
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<5450@buengc.BU.EDU>Path:
arc1-ca.pugleaf.net!utzoo!censor!geac!torsqnt!jarvis.csri.toronto.edu!rutgers!usc!snorkelwacker!bloom-beacon!bu.edu!buengc!bphReferences:
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Path: arc1-ca.pugleaf.net!utzoo!censor!geac!torsqnt!jarvis.csri.toronto.edu!rutgers!usc!snorkelwacker!bloom-beacon!bu.edu!buengc!bph From: bph@buengc.BU.EDU (Blair P. Houghton) Newsgroups: comp.lsi Subject: Re: A Question On Biasing Circuits Message-ID: <5450@buengc.BU.EDU> Date: 4 Mar 90 20:04:02 GMT References: <4025@mit-caf.MIT.EDU> Reply-To: bph@buengc.bu.edu (Blair P. Houghton) Followup-To: comp.lsi Organization: Boston Univ. Col. of Eng. Lines: 45