Article View: comp.lsi
Article #518Re: SPICE parameters for GaAs BJT's or diodes
From: Jen-I Pi
Date: Mon, 11 Feb 1991 12:02
Date: Mon, 11 Feb 1991 12:02
128 lines
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5443 bytes
In article <1991Feb7.153313.25417@jarvis.csri.toronto.edu>, chik@eecg.toronto.edu (Raymond Chik) writes:
|> In article <9102062047.AA09168@wookie.Mayo.edu> buchs%falcon.dnet@wookie.mayo.EDU (Kevin J. Buchs) writes:
|> >
|> >> Does anyone have reliable SPICE parameters for GaAs bipolar transistors
|> >> or GaAs diodes? There seem to be quite a few GaAsFET models, but I can't
|> >> seem to find any GaAs BJT models. Any models or ideas on where they
|> >> can be found would be appreciated.
|> >>
|> >> ken krieg
|> >>
|> >
|> >We do have GaAs BJT models we are using. However, we got those models
|> >from Rockwell under a non-disclosure agreement, so we can NOT distribute
|> >them. If you would like the name of a contact at Rockwell, send me a
|> >personal message with a return address.
|> >
|>
|> Could some one make a brief summary of what kinds of GaAs
|> FETs or BJT SPICE models that are current available/used?
|>
Let me give this a try for GaAs MESFET models.
However, this is nowhere a complete list!
First, some definitions :-)
---------------------------------------------------------------------
@string{ieeespt = "{IEEE} Spectrum"}
@string{ieeetcad= "{IEEE} Trans. on CAD"}
@string{ieeetmtt= "{IEEE} Trans. on Microwave Theory and Techniques"}
@string{ieeeted = "{IEEE} Trans. on Electron Devices"}
@string{ieeetmtt= "{IEEE} Journal of Solid-State Circuit"}
---------------------------------------------------------------------
A recent survey paper is
@article{Vendelin90,
author="G. D. Vendelin90,
title="Evaluating Nolinear Models for Microwave {GaAsFETs}",
journal=ieeespt, year=1990, pages={48--50}, month="September"
}
It contains a table of commercial available simulation tools for GaAs
MESFET designs. Five GaAs MESFET models are mentioned. They are
(1) Statz-Pucel's (Raytheon) Model:
--------------------------------------
@incollection{Pucel75,
author="R. A. Pucel and H. A. Haus and H. Statz",
title="Signal and Noise Properties of {GaAs} Microwave Fiels Effect\
Transistors",
booktitle="Advances in Electronics and Electron Physics",
publisher="Academic Press", year=1975, editor="L. Marton", pages={195--265}}
@article{Statz87,
author="H. Statz and P. Newman and I. W. Smith and R. A. Pucel and H. A. Haus",
title="Ga{A}s {FET} Device and Circuit SImulation in {SPICE}",
journal=ieeeted, year=1987, volume="ED-34", number=2, pages={160--169}}
(2) Curtice's Model:
--------------------------------------
@article{Curtice88,
author="W. R. Curtice",
title="{GaAs MESFET} Modeling and Nonlinear {CAD}",
journal=ieeetmtt, year=1988, volume="MTT-36", number=2, pages={220--230}}
(3) Kacprzak-Materka's Model:
--------------------------------------
@article{Kacprzak83,
author="T. Kacprzak and A. Materka",
title="Compact dc Model of {GaAs MESFET}'s for Large-Signal Computer\
Calculation"
journal=ieeejssc, year=1983, volume="SC-18", number=2, pages={211-213}
}
(4) T.O.M. (TriQuint) Model:
--------------------------------------
Described briefly in
@article{McCamant90,
author="A. J. Mc{C}amant and G. D. Mc{C}ormack and D. H. Smith",
title="An Improved Ga{A}s {MESFET} Model for {SPICE}",
journal=ieeetmtt, year=1990, volume="MTT-38", number=6, pages={822--824}}
(5) Trew's (N.C. State Univ.) Model:
--------------------------------------
@article{Golio85,
author="J. M. Golio and J. R. Hauser and P. A. Blakey",
title="A Large-Signal {GaAS MESFET} Model Implemented on {SPICE}",
journal="IEEE Circuits and Devices Magazine",
year=1985, pages={21--30} month="September"}
and recently,
@article{Khatibzadeh88,
author="M. Khatibzadeh and R. J. Trew",
title="A Large-Signal, Analytic Model for the {GaAs MESFET",
journal=ieeetmtt, year=1988, volume="MTT-36", number=2, pages={231--238}}
@article{Trew90,
author="R. T. Trew",
title="{MESFET} Models for Microwave Computer-Aided Design",
journal="Microwave Journal", year=1990, pages={115-130}, month="May"}
--------------------------------------
I'll add just two more. You could find a lot more in the references in
these papers...
(6) Larson's Model:
--------------------------------------
@article{Larson87,
author="L. E. Larson",
title="An Improved {GaAs MESFET} Equivalent Circuit Model for Analog\
Integrated Circuit Application",
journal=ieeejssc, year=1987, volume="SC-22", number=4, pages={567--574}
}
2. Hyun-Shur's Model:
--------------------------------------
@article{Hyun86,
author="C. H. Hyun and M. S. shur and N. C. Cirillo, Jr.",
title="Simulation and Design Analysis of {(AlGa)As/GaAs MODFET} Integrated\
Circuit",
journal=ieeetcad, year=1986, volume="CAD-5", number=2, pages={284--292}
}
Hope this helps,
Regards,
Jen-I pi@vlsi-cad.isi.edu :-)
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Path: arc1-ca.pugleaf.net!utzoo!attcan!uunet!wuarchive!usc!isi.edu!quark.isi.edu!pi From: pi@quark.isi.edu (Jen-I Pi) Newsgroups: comp.lsi Subject: Re: SPICE parameters for GaAs BJT's or diodes Keywords: GaAs MESFET models for circuit simulators Message-ID: <16711@venera.isi.edu> Date: 11 Feb 91 12:02:01 GMT References: <9102062047.AA09168@wookie.Mayo.edu> <1991Feb7.153313.25417@jarvis.csri.toronto.edu> Sender: news@isi.edu Reply-To: pi@quark.isi.edu (Jen-I Pi) Lines: 128