HEMT device modelling

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Article #661

#661

From: Armin Liebchen
Date: Fri, 14 Jun 1991 16:59

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I'm looking for process-parameters to model HEMT devices in SPICE for
a processor architecture simulation. I'd also be interested if anyone
has experience in yield characteristics and threshold variations
(especially local variations over small domains) of particular MODFET
heterostructure processes,

thanks for any info,

	Armin.

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Armin Liebchen                  Dept. of Computer Science MEB-4160
                                University of Utah
     .^.                        Salt Lake City, UT 84112
    ( v )                       (h) 801-363-5659
      ~                         (w) 801-581-7888
                                (e) liebchen@cs.utah.edu
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Path: arc1-ca.pugleaf.net!utzoo!utgpu!news-server.csri.toronto.edu!cs.utexas.edu!swrinde!zaphod.mps.ohio-state.edu!caen!hellgate.utah.edu!asylum.utah.edu!liebchen
From: liebchen%asylum.utah.edu@cs.utah.edu (Armin Liebchen)
Newsgroups: comp.lsi,comp.lsi.cad
Subject: HEMT device modelling
Keywords: HEMT, MODFET, GaAs, SPICE
Message-ID: <1991Jun14.105955.10587@hellgate.utah.edu>
Date: 14 Jun 91 16:59:55 GMT
Organization: Univ. of Utah / Computer Science
Lines: 19