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Thread View: comp.sys.transputer
2 messages
2 total messages Started by David Abramson Wed, 05 Oct 1988 01:12
T800 Memory Design
#2232
Author: David Abramson
Date: Wed, 05 Oct 1988 01:12
20 lines
1195 bytes
I have been searching the T800 documentations for information on the
effect of external memory speed on processor speed. Does anyone have this
information? The only reference I can find is that an internal memory
operation takes 1 cycle. Is it possible to have the T800 runnning at
full speed with external memory? What is the effect of slower memories.



Dr David Abramson 

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c/o Department of Communication & Electronic Engineering,
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Re: T800 Memory Design
#2234
Author: Moshe Braner
Date: Sat, 08 Oct 1988 20:37
18 lines
1521 bytes
[]

The Inmos documentation (I forget which book, I think it's one of the
little red ones) says that the number of extra machine cycles needed
to access external RAM is at least 3 and more typically 5, depending
on your hardware setup.  They have a table of the effect of putting
code, data, or both in external RAM on the execution speed of a couple
of benchmark programs.  The upshot is that relative to running everything
inside the transputer's on-chip RAM, putting code outside slows things
down by a factor of about 1.3, putting data outside slows by 1.7, and
putting both outside means about a 2-fold slow-down.  Note that data
has a larger effect than code, perhaps because the transputer reads
code 4 bytes at a time and each instruction is usually only 1 byte.
So put the workspace of your most time-critical function on-chip,
and use local variables in preference to globals, and you're going to
get almost full speed.

- Moshe Braner
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