Article View: sci.electronics
Article #10127Re: Transistor leakage current ?
From: Greg Ebert
Date: Wed, 13 Feb 1991 21:20
Date: Wed, 13 Feb 1991 21:20
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2148 bytes
[circuit deleted]
Icbo is collector-base leakage current with the emitter open. It is usually
specified for a 'large' collector-base voltage. It is also exponentially
related to temperature and approximately doubles every 8 degrees C (Ouch!).
Icbo is troublesome in the sense that when you connect the emitter (ie, use
the transistor in a real circuit), it will produce a collector-emitter current
approximately equal to (beta*Icbo). As collector current increases, so does
device heating, and thus Icbo, thus Ic... It is possible to construct a
circuit which will have sufficient positive thermal feedback to self-destruct.
But fortunately, you can shunt-away some/most Icb(o) by driving Vbe with
a voltage source, instead of leaving the base open. As suggested in the
original article, you can apply reverse Vbe bias without damaging the device
if you follow the spec. I did this with a 850V/75Amp (yes my friends, thats
AMPS, not mA or uA) device and its still quite healthy.
- - -
Though possibly off-subject, unclamped inductive loads (or improperly clamped)
are the most prevalent transistor-zappers in motor/inverter circuits. Have
respect for 1/2LI^2 ;if you don't provide a path for it to dissipate, it will
transmute your expensive device into a fuse.
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Path: arc1-ca.pugleaf.net!utzoo!utgpu!news-server.csri.toronto.edu!cs.utexas.edu!swrinde!zaphod.mps.ohio-state.edu!wuarchive!uunet!zephyr.ens.tek.com!gvgpsa!gold.gvg.tek.com!grege From: grege@gold.gvg.tek.com (Greg Ebert) Newsgroups: sci.electronics Subject: Re: Transistor leakage current ? Message-ID: <1973@gold.gvg.tek.com> Date: 13 Feb 91 21:20:50 GMT References: <JON_SREE.91Feb13151509@world.std.com> Organization: Grass Valley Group, Grass Valley, CA Lines: 31