Article View: sci.electronics
Article #10650Re: Testing MOSFETS?
From: Geoff Swan
Date: Sun, 27 Sep 1992 23:38
Date: Sun, 27 Sep 1992 23:38
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In article <1992Sep24.224850.1799@news2.cis.umn.edu>, rob@dexter.psych.umn.edu (Robert Stephens) writes:
> I have an N-ch MOSFET hi-speed switch. It has
> a Source, Drain, and Gate. Is there a way I
> can test its integrity by itself (out of the
> circuit)?
>
Use your trusty multi-meter on the 2k ohms range. Measure the following:
Gate - Source ..... open
Source - Gate ..... open
Gate - Drain ...... open
Drain - Gate ...... open
Drain - Source .... about 500 ohms (due to body-drain diode)
Source - Drain .... open
Apply +Ve lead from ohm meter (usually black) to gate and -Ve lead
(usually red) to source. Without touching any of the terminals (that's
enough leakage to turn it off), measure drain-source and source-drain. They
should read close to zero. Whilst measuring source-drain, touch the gate
pin and you should see the device turn off.
Sla/n go fo/ill,
Risky B.
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Geoff Swan (research & development) _--_|\ swanee@megadata.oz.au
Megadata Pty Ltd / \
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Newsgroups: sci.electronics Path: arc1-ca.pugleaf.net!sparky!uunet!munnari.oz.au!metro!dmssyd.syd.dms.CSIRO.AU!megadata!swanee From: swanee@megadata.mega.oz.au (Geoff Swan) Subject: Re: Testing MOSFETS? Message-ID: <1992Sep27.233811.11954@megadata.mega.oz.au> Sender: news@megadata.mega.oz.au Organization: Megadata P/L, North Ryde, Sydney, Aust. References: <1992Sep24.224850.1799@news2.cis.umn.edu> Date: Sun, 27 Sep 1992 23:38:11 GMT Lines: 28