🚀 go-pugleaf

I'm trying to adopt some models for some high power semiconductor devices
from HSPICE running on a VAX to PSpice on an IBM PC. I've been having
some trouble with the transistor parameters, some of which seem very
important (the device doesn't seem to work for us while it worked
fine in HSPICE). I had nothing to do with the original HSPICE version
and have never used it, so can anyone help me with some parameter
definitions for HSPICE? In particular, what are IBC and IBE for the
BJT models, and BV for the diode? Is the normal spice parameter VB
equivalent to BV? Are there equivalents for IBC and IBE in regular SPICE?

Basically, word definitions for the parameters should be very helpful,
these I can compare with the descriptions in the PSpice and SPICE manuals.
Apparently HSPICE is geared toward semiconductor applications and allows
some more detailed paramaters.

Please reply by email if possible.

Andy Tefft   art100@psuvm.bitnet     art100@psuvm.psu.edu