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Article #2884

Re: Hex-FET's and infinite im

#2884
From: James W. Swonger
Date: Tue, 14 Apr 1992 20:28
13 lines
1434 bytes
 HexFETs get their name from the use of a hexagonal unit cell, which produces
a honeycomb structure maximizing gate width per surface area. Power FETs are
often quite different from the sort of MOSFETs you find on logic ICs; some
are fabricated with the gates occupying V-groove trenches (to give higher
withstand voltages in smaller space), some are actually vertical rather than
lateral, passing current from frontside to backside instead of across the
surface. There is still a bit of art involved in power device design. 
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From: jws@cica4.mlb.semi.harris.com (James W. Swonger)
Newsgroups: sci.electronics
Subject: Re: Hex-FET's and infinite im
Message-ID: <1992Apr14.202803.6209@mlb.semi.harris.com>
Date: 14 Apr 92 20:28:03 GMT
References: <gate.9uo2iB1w164w@toz.buffalo.ny.us>
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