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Article #2884Re: Hex-FET's and infinite im
From: James W. Swonger
Date: Tue, 14 Apr 1992 20:28
Date: Tue, 14 Apr 1992 20:28
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HexFETs get their name from the use of a hexagonal unit cell, which produces a honeycomb structure maximizing gate width per surface area. Power FETs are often quite different from the sort of MOSFETs you find on logic ICs; some are fabricated with the gates occupying V-groove trenches (to give higher withstand voltages in smaller space), some are actually vertical rather than lateral, passing current from frontside to backside instead of across the surface. There is still a bit of art involved in power device design. -- ########################################################################## #Irresponsible rantings of the author alone. Any resemblance to persons # #living or dead then yer bummin. May cause drowsiness. Alcohol may inten-# #sify this effect. Pay no attention to the man behind the curtain. Billy!#
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arc1-ca.pugleaf.net!sparky!uunet!zephyr.ens.tek.com!uw-beaver!micro-heart-of-gold.mit.edu!wupost!usc!zaphod.mps.ohio-state.edu!mips!darwin.sura.net!mlb.semi.harris.com!cica4.mlb.semi.harris.com!jwsReferences:
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Path: arc1-ca.pugleaf.net!sparky!uunet!zephyr.ens.tek.com!uw-beaver!micro-heart-of-gold.mit.edu!wupost!usc!zaphod.mps.ohio-state.edu!mips!darwin.sura.net!mlb.semi.harris.com!cica4.mlb.semi.harris.com!jws From: jws@cica4.mlb.semi.harris.com (James W. Swonger) Newsgroups: sci.electronics Subject: Re: Hex-FET's and infinite im Message-ID: <1992Apr14.202803.6209@mlb.semi.harris.com> Date: 14 Apr 92 20:28:03 GMT References: <gate.9uo2iB1w164w@toz.buffalo.ny.us> Sender: news@mlb.semi.harris.com Organization: Harris Semiconductor, Melbourne FL Lines: 13 Nntp-Posting-Host: cica4.mlb.semi.harris.com