Article View: sci.electronics
Article #3903Re: 1N34s
From: Isaac S Wingfield
Date: Fri, 01 Dec 1989 01:06
Date: Fri, 01 Dec 1989 01:06
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3640 bytes
(I wrote:)
>>...we concluded that germanium diode specs
>>were all kind of loose, and it was possible to duplicate (or even better)
>>all specs *except* FCD using silicon, and that's what nearly everybody
>>was doing! The ITT devices came in at 0.3V, and everything was fine.
(And Henry Spencer wrote:)
>I was sort of curious about this, and ran some tests on the 1N34s I've
>got in my parts box at home. They are from Rockwell, I think -- at least
>the tiny symbol on the side looks like the Rockwell logo! I *think* these
>are germanium; the current-vs-voltage curve does start to break at 0.3V.
>What startled me a bit was how gradual the rise was after that; within
>the limits of my simple measuring setup, it looked like a near-linear rise
>at about 1mA/100mV, whereas the one for a 1N4148 is nearly vertical at
>circa 0.6V. Is this normal for germanium, or have I got something funny
>like silicon pretending to be germanium?
>--
>That's not a joke, that's | Henry Spencer at U of Toronto Zoology
>NASA. -Nick Szabo | uunet!attcan!utzoo!henry henry@zoo.toronto.ed
u
Checking a mid-50's Sylvania reference, they say a 1N34 can have a forward
resistance of 200 ohms max. at 1 volt, so your result is not out of line.
Sounds to me like you've got the real thing. Gonna build a crystal set?
Something way in the back of my mind is saying there is/was some kind
of alliance or merger or something concerning Rockwell and ITT. I'm
really not sure; just a feeling....
As long as we're still on the subject, someone (sorry, lost the attribution)
said it would be easy to tell Si from Ge just by checking the data sheet;
I presume they haven't read too many older data sheets, which tended to be
a bit sparse by today's standards.
Here's *all* Sylvania (the manufacturer) had to say about the 1N34:
Description: General Purpose Diode
Ambient Temperature Range (deg C): -50 to +75.
(All following ratings are specified at 25 C only)
Continuous Reverse Working Volts: 60
Recurrent Peak Anode Current (ma): 150
Average Anode Current (ma): 50
Surge Current (ma, 1 sec): 500
Peak Reverse Voltage (Volts min): 75
Forward current at +1V (ma, min): 5
Reverse Current (microamps, min): 30 @ -10V, 500 @ -50V
Forward Resistance at +1V (ohms max): 200
Reverse Resistance (ohms min): 333K @ -10V, 100K @ -50V
Well, I dunno. About the only clue I get from that as to what kind of
diode it is, is *not a very good one*. That's why manufacturers could
substitute Silicon (floor sweepings, even) and still satisfy the "spec".
Nostalgia time: Early 1N34's were point contact devices packaged in a
ceramic tube with screw-on metal end caps (looked like a short fuse).
There were construction articles on how to take two of these things
apart to get the tungsten cat whiskers, and put both of them *real
close together* on one of the germanium crystals to make your own transistor.
I never got it to work.
Isaac
isw@cup.portal.com
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Path: arc1-ca.pugleaf.net!utzoo!attcan!utgpu!jarvis.csri.toronto.edu!cs.utexas.edu!wuarchive!usc!apple!fox!portal!cup.portal.com!ISW From: ISW@cup.portal.com (Isaac S Wingfield) Newsgroups: sci.electronics Subject: Re: 1N34s Message-ID: <24605@cup.portal.com> Date: 1 Dec 89 01:06:53 GMT References: <5386@internal.Apple.COM> <24441@cup.portal.com> <1989Nov25.080724.19517@utzoo.uucp> <24473@cup.portal.com> <1989Nov29.175720.4671@utzoo.uucp> Distribution: na Organization: The Portal System (TM) Lines: 66