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Article #4063Ohmic Contacts to n-AlGaAs
From: John Berryhill
Date: Thu, 11 Jan 1990 16:14
Date: Thu, 11 Jan 1990 16:14
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984 bytes
I'm having some trouble with contacts on n-AlGaAs (x=.1 or so). I'm depositing about 5000 Angstroms of Au-Ge alloy (12% Ge) and following that with 1000A of nickel. Some of the time, it works just fine, but too often the contacts tend to ball up when I'm alloying them to the AlGaAs layer. As I understand it, the purpose of the Ni layer is to keep that from happening. Is there something else I should be doing in addition to the Ni to prevent it from balling up? -- John Berryhill 143 King William, Newark DE 19711
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Path: arc1-ca.pugleaf.net!utzoo!utgpu!jarvis.csri.toronto.edu!mailrus!uwm.edu!cs.utexas.edu!wuarchive!udel!berryh From: berryh@udel.edu (John Berryhill) Newsgroups: sci.electronics,sci.physics Subject: Ohmic Contacts to n-AlGaAs Message-ID: <7940@nigel.udel.EDU> Date: 11 Jan 90 16:14:57 GMT Sender: usenet@udel.EDU Reply-To: berryh@udel.edu (John Berryhill) Followup-To: sci.electronics Organization: University of Delaware Lines: 13