Article View: sci.electronics
Article #4073Re: Ohmic Contacts to n-AlGaAs
From: Michael B. Brooks
Date: Thu, 11 Jan 1990 23:55
Date: Thu, 11 Jan 1990 23:55
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I never expected to find this on the net John! I`m happy to reply, since this is my thesis research project here at SU. Try the Ni first, in this recipe, as a starter. If possible, give Rapid Thermal Annealing a whirl: E beam evaporate: 50-100A Ni ~750A Au/Ge Eutectic 250A Ni 1000A Au (for reduced resistivity, the overlayer of Au is essential) RTA times 30-45 sec or so, 450C or less furnace anneal, 450C, under 5 min., forming gas Note that the amount of Au/Ge is variable, and can be evaporated as separate layers of the same overall composition. One must have a thin layer of Ni first to prevent the balling effects that you noticed (it`s more complicated than this, a black art really) See Gallium Arsenide, by MJ Howes and Dv.Morgan (John Wiley & Sons, 1985), or Gallium Arsenide Processing Techniques by RE Williams, (Artech House, 1984) for starters. Mike Brooks/Stanford Electronics Labs (solid state)/SU
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arc1-ca.pugleaf.net!utzoo!utgpu!jarvis.csri.toronto.edu!mailrus!cs.utexas.edu!uwm.edu!zaphod.mps.ohio-state.edu!brutus.cs.uiuc.edu!lll-winken!decwrl!shelby!brooks@sierra.Stanford.EDUReferences:
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Path: arc1-ca.pugleaf.net!utzoo!utgpu!jarvis.csri.toronto.edu!mailrus!cs.utexas.edu!uwm.edu!zaphod.mps.ohio-state.edu!brutus.cs.uiuc.edu!lll-winken!decwrl!shelby!brooks@sierra.Stanford.EDU From: brooks@sierra.Stanford.EDU (Michael B. Brooks) Newsgroups: sci.electronics Subject: Re: Ohmic Contacts to n-AlGaAs Summary: try Ni first Keywords: ohmic contacts GaAs, AlGaAs Message-ID: <454@sierra.stanford.edu> Date: 11 Jan 90 23:55:32 GMT References: <7940@nigel.udel.EDU> Sender: brooks@sierra.STANFORD.EDU (Michael B. Brooks) Reply-To: brooks@sierra.UUCP (Michael B. Brooks) Organization: Stanford University Lines: 23