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Article #4086Re: Ohmic Contacts to n-AlGaAs
From: John Berryhill
Date: Fri, 12 Jan 1990 15:14
Date: Fri, 12 Jan 1990 15:14
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In article <454@sierra.stanford.edu> brooks@sierra.UUCP (Michael B. Brooks) writes: >E beam evaporate: >50-100A Ni >~750A Au/Ge Eutectic >250A Ni >1000A Au (for reduced resistivity, the overlayer of Au is essential) Do you have a reference for this by any chance? Also, have you tried the recipe by Shih and Blum, "Contact Resistances of Au-Ge-Ni, Au-Zn and Al to II-V Compounds" from Solid State Electronics, V15,n11-A, pp. 1177-1180? Apparently they thermally evaporated an alloy of the Au-Ge eutectic plus 5%wt. Ni in one shot. Our E beam machine is a little flakey and I'd like to stick with thermal evaporation if I could. Of course, one of the problems with thermal evaporation of alloys is that the species will often come out of the boat separately. -- John Berryhill 143 King William, Newark DE 19711
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Path: arc1-ca.pugleaf.net!utzoo!attcan!uunet!wuarchive!udel!berryh From: berryh@udel.edu (John Berryhill) Newsgroups: sci.electronics Subject: Re: Ohmic Contacts to n-AlGaAs Keywords: ohmic contacts GaAs, AlGaAs Message-ID: <8039@nigel.udel.EDU> Date: 12 Jan 90 15:14:48 GMT References: <7940@nigel.udel.EDU> <454@sierra.stanford.edu> Sender: usenet@udel.EDU Reply-To: berryh@udel.edu (John Berryhill) Organization: University of Delaware Lines: 21