🚀 go-pugleaf

In article <1992Aug31.200556.3498@aee.aee.com> gene@aee.aee.com (Gene Kochanowsky) writes:
>hoff@fasic5.fnal.gov (Jim Hoff) writes:
>
>>In article <1992Aug20.004110.3357@unixg.ubc.ca>, sankey@unixg.ubc.ca (Todd Sankey) writes:
>>|> 
>>|>   I am trying to prepare a presentation on the current state of research
>>|> in chip fabrication. I am requesting any sort of information from
>>|> researchers/students/engineers/anyone in the know.
>                (lines deleted)

>>I'm not really sure how to approach this.  I guess, in short, I'll just ask 
>>what exactly is it you want to know?  No offense, but this is like saying
>>I'm presenting a paper on trees, send me everything you know about trees.
>>It's just a little broad.  If you ask specific question, or even post a 
>>questionaire, I'll be happy to respond, if it is in my area, but, heck, I
>>could talk your ear off probably for several days running on 
>>"chip fabrication", and most of it would be of no interest to you whatsoever.
>
>>If you wish, please repost with a much more specific series of questions.
>
>>					Jim Hoff
>Jim,
>
>	if you wished to do this that would be great. I have long had a great
>interest in this area. However if this seems to be too much, then a brief overview
>would also be appreciated.
>
>Gene Kochanowsky
>
>-- 
>------------------------------------------------------------------------------
>Gene Kochanowsky                           | "And remember ....
>Associated Electronic Engineers, Inc.      |       The better you look ... 
>2864 Cercy Trace                           |       

I think the best way to get info on this topic is to respond to a list
of different areas currently being researched.  Below I present a partial
list of the current areas of interest in semiconductor device/fab. tech.

1. Silicon, standard typically is DRAM size and minimum resolution
	-256 MBit DRAMs are currently being made with ~0.35 um resolution
	-1 GBit DRAMs expected in the next 5 years, ~0.2 um resolution
	-X-ray lithography should enable sub 0.1 um resolution, still
	  need a collimated, high intensity source
	-phase shift mask tech. theoretically able to get 0.15 um res.

2. GaAs/AlGaAs & InGaAs/InAlAs/InP, high speed electronics
	-able to create devices in 1-100 GHz range 
	-high radiation tolerance, i.e.: space & nuclear appl.
	-may be possible to integrate devices together with Si devices
	-fiber optics, communications

3. GaN, InN, AlN
	-potential for UV lasers and detectors, if realized will 
	  revolutionize graphics and imaging systems because solid
	  state red, green and blue lasers will be available.
	-secure space to space communications, signals will be absorbed
	  by ozone layer if it still exists
	-probs. in layer quality, not too severe

4. BN, SiC, diamond
	-superhard materials, high radiation tolerance, low co-eff. of
	  friction, i.e. lubricant not needed.
	-appl. mainly in coatings, moving into semiconductors
	-research recently declassified
	-tremendous amount of appl.

I hope this list helped you guys out.  There is also a lot of research
being done in multichip module, hybrid circuits of which I am mostly
ignorant of at this moment.

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| Walter A. Wohlmuth				walter@ee.ubc.ca         |
| Tri-University Meson Facility			U of B.C., Canada        |
| Microelectronics Lab							 |
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