🚀 go-pugleaf

Hi,

I am looking at polished or cleaved cross sections of silicon IC's using an
SEM.

In order to obtain contrast between layers I use different wet chemical
etchants, e.g. diluted HF for aluminium, buffered HF for silicon dioxide etc.

Now, I would like to know if there are any good suggestions for methods to use
to obtain delineation of doped regions in silicon. I have used Sponheimer-
Mills and Rowe etchants and got useful results for high dopant concentrations,
but I would also like to detect lower dopant levels in a reproducible way.

Perhaps some kind of plating could do the job?
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Mikael Jargelius  -  mikael@inmic.se                  *
Swedish Institute of Microelectronics                 *     *        *
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