🚀 go-pugleaf

5916rahmank@vms.csd.mu.edu writes:
> In article <1992Sep7.153215.8703@vax.oxford.ac.uk>, atmdcc@vax.oxford.ac.uk 
> 	writes:
> |>Does anyone know of a good method of making an ohmic contact to n-type 
> >silicon?
> |>
> |>What I'm looking for is a simple evaporation/ sputtering technique to 
> |>deposit a
> |>metal or alloy down onto the silicon which avoids the unnecessary complication
> |>of having to selectively dope a particular region. The metal-semiconductor
> |>should not form a diode and the metal should adhere properly.
> |>
> |>I've looked at some literature and whilst there's plenty of theoretical info
> |>about energy bands, Fermi levels, and so on, there's scant detail of what you
> |>do in practice.
> |>-- 
> |>................................................................................
> |> David Catling 	[Tel:+44 865 272927 Fax:+44 865 272923]
> 
> We have used AuPd and Pt target to sputter contact pad on SnO2 and found
> good results. I'm not sure if these metals produce non-ohmic contact
> with Si. You might wanna look into Ben Streetman, and Heinz Henisch.
> 
> -K. M. A. Rahman.
   
i have read a paper they did the n-si contact just simply by    
'attaching the whole silicon bottom side onto a copper plate
with silver paint' to form the ohmic contact.  the refernce 
is j. appl. phys. 68(11), 5902, 1990.  hope this help.

benjamin s. m. lin

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smlin@uz.nthu.edu.tw
dept. materials sci & eng
national tsing hua uni.
hsin-chu, taiwan
r.o.c.
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