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Started by Alfred M. Kriman
Tue, 10 Nov 1992 07:39
SUNY@BUFFALO, Mon 16 Nov; Kinetic Modeling of GaAs CBE; V.M.Donnelly
Author: Alfred M. Kriman
Date: Tue, 10 Nov 1992 07:39
Date: Tue, 10 Nov 1992 07:39
31 lines
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2261 bytes
_S_e_m_i_n_a_r -- Center for Electronic and Electro-optic Materials (CEEM)
+----------------------------------------------------------+
| Title: Kinetic Modeling of GaAs Chemical Beam Epitaxy |
| |
| Speaker: Dr. Vince M. Donnelly |
| of: AT&T Bell Laboratories, Murray Hill |
+----------------------------------------------------------+
Location: Room 107 of O'Brian Hall, Amherst Campus of SUNYAB
(The default location for CEEM seminars this semester.)
Date: Monday, November 16, 1992
Time: 3:45 PM (Refreshments 3:30 PM)
Quasi Caesar: Gallium est omne partitum, inter radicis tres.
(_The Chemical Beam Wars_, Book I)
Information: Prof. A. M. Kriman, kriman@acsu.buffalo.edu
or: Maria Kuang, (716) 645-3119
_A_B_S_T_R_A_C_T:
Results of recent ultrahigh vacuum, surface science studies from this and
other laboratories have been used to improve a previously proposed kinetic
model for the growth of GaAs by chemical beam epitaxy (CBE) with an effusive
beam of triethylgallium (TEGa). The major conclusions are: 1) at low temp-
erature the increase in growth rate with temperature is due to an increase
in the rate limiting desorption of hydrocarbon products (C2H4 and C2H5), and
2) at high temperature, the fall-off in growth rate is a consequence of
precursor-mediated adsorption of TEGa, i.e., as temperature increases, de-
sorption of TEGa begins to compete with dissociation.
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