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Article #430NPN device characteristics in SCNA20?
From: Joel Kennedy
Date: Thu, 06 Dec 1990 16:40
Date: Thu, 06 Dec 1990 16:40
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928 bytes
Hello, I would like to consider having something fabricated
using the NPN devices available on the SCNA20 MOSIS process
and would like to know more about what properties they have.
1) Is there any "example" transistor with Spice models
available through MOSIS mail requests?
2) Has anybody else done this? What sort of Rc, etc, was
found?
3) Any other advice/warnings/etc would be appreciated. Thanks.
Joel Kennedy
kennedy@ee.umn.edu
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arc1-ca.pugleaf.net!utzoo!censor!geac!torsqnt!news-server.csri.toronto.edu!cs.utexas.edu!know!news.cs.indiana.edu!msi.umn.edu!cs.umn.edu!jkennedyShow Full Headers
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Path: arc1-ca.pugleaf.net!utzoo!censor!geac!torsqnt!news-server.csri.toronto.edu!cs.utexas.edu!know!news.cs.indiana.edu!msi.umn.edu!cs.umn.edu!jkennedy From: jkennedy@umn-cs.cs.umn.edu (Joel Kennedy) Newsgroups: comp.lsi Subject: NPN device characteristics in SCNA20? Message-ID: <1990Dec6.164058.7650@cs.umn.edu> Date: 6 Dec 90 16:40:58 GMT Sender: jkennedy@cs.umn.edu (Joel Kennedy) Distribution: na Organization: University of Minnesota, Minneapolis - EE Dept. Lines: 11