Article View: comp.lsi
Article #431Re: NPN device characteristics in SCNA20?
From: Shih-Lien Lu
Date: Thu, 06 Dec 1990 18:31
Date: Thu, 06 Dec 1990 18:31
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1583 bytes
In article <1990Dec6.164058.7650@cs.umn.edu> jkennedy@umn-cs.cs.umn.edu (Joel Kennedy) writes:
>Hello, I would like to consider having something fabricated
>using the NPN devices available on the SCNA20 MOSIS process
>and would like to know more about what properties they have.
>1) Is there any "example" transistor with Spice models
> available through MOSIS mail requests?
>2) Has anybody else done this? What sort of Rc, etc, was
> found?
>3) Any other advice/warnings/etc would be appreciated. Thanks.
>
>Joel Kennedy
>kennedy@ee.umn.edu
(1) FTP from "vlsi-cad.isi.edu" using "anonymous" as login with any password
the file "npn.mag".
I have put a prelim. model file "bipolar.mod" there also. REMEBER this
is PRELIMINARY DATA.
(2) You may use the model file to find the Rc of the corresponding NPN
transistors with SPICE.
(3) One lesson we have learned: Do not use the minimum sized NPN
transistor as depicted in the MOSIS' design rule file.
Shih-Lien Lu
sllu@mosis.edu
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Path: arc1-ca.pugleaf.net!utzoo!censor!geac!torsqnt!news-server.csri.toronto.edu!cs.utexas.edu!usc!isi.edu!jenny.isi.edu!sllu From: sllu@jenny.isi.edu (Shih-Lien Lu) Newsgroups: comp.lsi Subject: Re: NPN device characteristics in SCNA20? Keywords: MOSIS' NPN transistor Message-ID: <15937@venera.isi.edu> Date: 6 Dec 90 18:31:20 GMT References: <1990Dec6.164058.7650@cs.umn.edu> Sender: news@isi.edu Reply-To: sllu@jenny.isi.edu.UUCP (Shih-Lien Lu) Followup-To: mosis.edu Distribution: na Organization: USC-Information Sciences Institute Lines: 26