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International Journal of High Speed Electronics and Systems
Vol. 14, No. 2 (June 2004)

Special Issue On Radiation Effects And Soft Errors In Integrated
Circuits And Electronic Devices
Edited by R. D. Schrimpf and D. M. Fleetwood

The electronic version of this issue is available from the journal's
web site at no charge. View table-of-contents and abstracts at
http://www.worldscinet.com/ijhses.html

Contents:

Preface

Single Event Effects In Avionics And On The Ground
Eugene Normand

Soft Errors In Commercial Integrated Circuits
R. C. Baumann

Single-Event Effects In Iii-V Semiconductor Electronics
Dale Mcmorrow, Joseph S. Melinger And Alvin R. Knudson

Investigation Of Single-Event Transients In Fast Integrated Circuits
With A Pulsed Laser
P. Fouillat, V. Pouget, D. Lewis, S. Buchner And D. Mcmorrow

System Level Single Event Upset Mitigation Strategies
W. F. Heidergott

Radiation-Tolerant Design For High Performance Mixed-Signal Circuits
W. T. Holman

A Total-Dose Hardening-By-Design Approach For High-Speed Mixed-Signal
Cmos Integrated Circuits
Nathan Nowlin, John Bailey, Bob Turfler And Dave Alexander

Radiation Issues In The New Generation Of High Energy Physics
Experiments
F. Faccio

Space Radiation Effects In Optocouplers
Robert A. Reed, Paul W. Marshall And Kenneth A. Label

Radiation Effects In Charge-Coupled Device (Ccd) Imagers And Cmos
Active Pixel Sensors
G. R. Hopkinson And A. Mohammadzadeh

The Effects Of Space Radiation Exposure On Power Mosfets: A Review
K. Shenai, K.F. Galloway And R.D. Schrimpf

Introduction To Soi Mosfets: Context, Radiation Effects, And Future
Trends
Sorin Cristoloveanu And V�ronique Ferlet-Cavrois

Total-Dose And Single-Event Effects In Silicon-Germanium Heterojunction
Bipolar Transistors
John D. Cressler

Gain Degradation And Enhanced Low-Dose-Rate Sensitivity In Bipolar
Junction Transistors
R. D. Schrimpf

Total Dose Effects In Linear Bipolar Integrated Circuits
H. J. Barnaby

Hardness Assurance For Commercial Microelectronics
Ronald L. Pease

Ionizing Radiation Effects On Ultra-Thin Oxide Mos Structures
A. Cester And A. Paccagnella

Hydrogen At The Si/Sio2 Interface: From Atomic-Scale Calculations To
Engineering Models
S. N. Rashkeev, D. M. Fleetwood, R. D. Schrimpf And S. T. Pantelides

Switching Oxide Traps
Timothy R. Oldham

Online And Realtime Dosimetry Using Optically Stimulated Luminescence
L. Dusseau And J. Gasiot

For more information, go to http://www.worldscinet.com/ijhses.html