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Article #163

Re: Ohmic contacts to n-type silicon

#163
From: 5916rahmank
Date: Tue, 08 Sep 1992 18:10
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In article <1992Sep7.153215.8703@vax.oxford.ac.uk>, atmdcc@vax.oxford.ac.uk 
	writes:
|>Does anyone know of a good method of making an ohmic contact to n-type 
>silicon?
|>
|>What I'm looking for is a simple evaporation/ sputtering technique to 
|>deposit a
|>metal or alloy down onto the silicon which avoids the unnecessary complication
|>of having to selectively dope a particular region. The metal-semiconductor
|>should not form a diode and the metal should adhere properly.
|>
|>I've looked at some literature and whilst there's plenty of theoretical info
|>about energy bands, Fermi levels, and so on, there's scant detail of what you
|>do in practice.
|>-- 
|>................................................................................
|> David Catling 	[Tel:+44 865 272927 Fax:+44 865 272923]

We have used AuPd and Pt target to sputter contact pad on SnO2 and found
good results. I'm not sure if these metals produce non-ohmic contact
with Si. You might wanna look into Ben Streetman, and Heinz Henisch.

-K. M. A. Rahman.
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From: 5916rahmank@vms.csd.mu.edu
Newsgroups: sci.materials
Subject: Re: Ohmic contacts to n-type silicon
Date: Tue, 08 Sep 1992 18:10:47 GMT
Organization: Marquette University - Computer Services
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