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Article #163Re: Ohmic contacts to n-type silicon
From: 5916rahmank
Date: Tue, 08 Sep 1992 18:10
Date: Tue, 08 Sep 1992 18:10
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In article <1992Sep7.153215.8703@vax.oxford.ac.uk>, atmdcc@vax.oxford.ac.uk writes: |>Does anyone know of a good method of making an ohmic contact to n-type >silicon? |> |>What I'm looking for is a simple evaporation/ sputtering technique to |>deposit a |>metal or alloy down onto the silicon which avoids the unnecessary complication |>of having to selectively dope a particular region. The metal-semiconductor |>should not form a diode and the metal should adhere properly. |> |>I've looked at some literature and whilst there's plenty of theoretical info |>about energy bands, Fermi levels, and so on, there's scant detail of what you |>do in practice. |>-- |>................................................................................ |> David Catling [Tel:+44 865 272927 Fax:+44 865 272923] We have used AuPd and Pt target to sputter contact pad on SnO2 and found good results. I'm not sure if these metals produce non-ohmic contact with Si. You might wanna look into Ben Streetman, and Heinz Henisch. -K. M. A. Rahman.
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Path: arc1-ca.pugleaf.net!sparky!uunet!spool.mu.edu!vms.csd.mu.edu!5916RAHMANK From: 5916rahmank@vms.csd.mu.edu Newsgroups: sci.materials Subject: Re: Ohmic contacts to n-type silicon Date: Tue, 08 Sep 1992 18:10:47 GMT Organization: Marquette University - Computer Services Lines: 23 Message-ID: <009604EF.CC3C5800@vms.csd.mu.edu> References: <1992Sep7.153215.8703@vax.oxford.ac.uk> Reply-To: 5916rahmank@vms.csd.mu.edu NNTP-Posting-Host: vmsa.csd.mu.edu