Article View: sci.materials
Article #162Ohmic contacts to n-type silicon
From: atmdcc
Date: Mon, 07 Sep 1992 14:32
Date: Mon, 07 Sep 1992 14:32
19 lines
1397 bytes
1397 bytes
Does anyone know of a good method of making an ohmic contact to n-type silicon? What I'm looking for is a simple evaporation/ sputtering technique to deposit a metal or alloy down onto the silicon which avoids the unnecessary complication of having to selectively dope a particular region. The metal-semiconductor should not form a diode and the metal should adhere properly. I've looked at some literature and whilst there's plenty of theoretical info about energy bands, Fermi levels, and so on, there's scant detail of what you do in practice. -- ................................................................................ David Catling [Tel:+44 865 272927 Fax:+44 865 272923] University of Oxford, Atmospheric, Oceanic and Planetary Physics, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom. Preferred Email: catling@atm.ox.ac.uk (janet) catling@isams.dnet.nasa.gov (internet) My Law of Optimism:"The sooner you fall behind, The more time to catch up" ................................................................................
Technical Details
Message-ID:
<1992Sep7.153215.8703@vax.oxford.ac.uk>Path:
arc1-ca.pugleaf.net!sparky!uunet!mcsun!uknet!comlab.ox.ac.uk!oxuniv!atmdccShow Full Headers
Complete Article Headers
Path: arc1-ca.pugleaf.net!sparky!uunet!mcsun!uknet!comlab.ox.ac.uk!oxuniv!atmdcc From: atmdcc@vax.oxford.ac.uk Newsgroups: sci.materials Subject: Ohmic contacts to n-type silicon Message-ID: <1992Sep7.153215.8703@vax.oxford.ac.uk> Date: 7 Sep 92 14:32:14 GMT Organization: Oxford University VAX 6620 Lines: 19