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Article #162

Ohmic contacts to n-type silicon

#162
From: atmdcc
Date: Mon, 07 Sep 1992 14:32
19 lines
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Does anyone know of a good method of making an ohmic contact to n-type silicon?

What I'm looking for is a simple evaporation/ sputtering technique to deposit a
metal or alloy down onto the silicon which avoids the unnecessary complication
of having to selectively dope a particular region. The metal-semiconductor
should not form a diode and the metal should adhere properly.

I've looked at some literature and whilst there's plenty of theoretical info
about energy bands, Fermi levels, and so on, there's scant detail of what you
do in practice.
-- 
................................................................................
 David Catling 	[Tel:+44 865 272927 Fax:+44 865 272923]
 	University of Oxford,  Atmospheric, Oceanic and Planetary Physics,
  	Clarendon Laboratory,  Parks Road,  Oxford OX1 3PU,  United Kingdom.
 Preferred Email: catling@atm.ox.ac.uk (janet)
		  catling@isams.dnet.nasa.gov (internet)
 My Law of Optimism:"The sooner you fall behind, The more time to catch up"
................................................................................
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Path: arc1-ca.pugleaf.net!sparky!uunet!mcsun!uknet!comlab.ox.ac.uk!oxuniv!atmdcc
From: atmdcc@vax.oxford.ac.uk
Newsgroups: sci.materials
Subject: Ohmic contacts to n-type silicon
Message-ID: <1992Sep7.153215.8703@vax.oxford.ac.uk>
Date: 7 Sep 92 14:32:14 GMT
Organization: Oxford University VAX 6620
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