Thread View: sci.materials
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Started by Mikael Jargelius
Fri, 10 Apr 1992 09:22
Dopant delineation in silicon
Author: Mikael Jargelius
Date: Fri, 10 Apr 1992 09:22
Date: Fri, 10 Apr 1992 09:22
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1366 bytes
Hi,
I am looking at polished or cleaved cross sections of silicon IC's using an
SEM.
In order to obtain contrast between layers I use different wet chemical
etchants, e.g. diluted HF for aluminium, buffered HF for silicon dioxide etc.
Now, I would like to know if there are any good suggestions for methods to use
to obtain delineation of doped regions in silicon. I have used Sponheimer-
Mills and Rowe etchants and got useful results for high dopant concentrations,
but I would also like to detect lower dopant levels in a reproducible way.
Perhaps some kind of plating could do the job?
--
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Mikael Jargelius - mikael@inmic.se *
Swedish Institute of Microelectronics * * *
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Re: Dopant delineation in silicon
Author: Tom Knight
Date: Sat, 11 Apr 1992 14:46
Date: Sat, 11 Apr 1992 14:46
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In article <1992Apr10.092224.20684@sics.se> mikael@inmic.se (Mikael Jargelius) writes: In order to obtain contrast between layers I use different wet chemical etchants, e.g. diluted HF for aluminium, buffered HF for silicon dioxide etc. Now, I would like to know if there are any good suggestions for methods to use to obtain delineation of doped regions in silicon. I have used Sponheimer- Mills and Rowe etchants and got useful results for high dopant concentrations, but I would also like to detect lower dopant levels in a reproducible way. Perhaps some kind of plating could do the job? You might check out the (probably out of print) book "Semiconductor Measurements and Instrumentation", by WR Runyan, McGraw-Hill '75. It has a discussion on visualization stains. I believe their suggestions included adding very small amounts of cupric nitrate to the buffered HF to decorate the diffused regions. If anyone knows effective techniques for removing metal-2 without removing metal-1, I'd be grateful for some hints.
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