Thread View: sci.materials
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Started by atmdcc
Mon, 07 Sep 1992 14:32
Ohmic contacts to n-type silicon
Author: atmdcc
Date: Mon, 07 Sep 1992 14:32
Date: Mon, 07 Sep 1992 14:32
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Does anyone know of a good method of making an ohmic contact to n-type silicon? What I'm looking for is a simple evaporation/ sputtering technique to deposit a metal or alloy down onto the silicon which avoids the unnecessary complication of having to selectively dope a particular region. The metal-semiconductor should not form a diode and the metal should adhere properly. I've looked at some literature and whilst there's plenty of theoretical info about energy bands, Fermi levels, and so on, there's scant detail of what you do in practice. -- ................................................................................ David Catling [Tel:+44 865 272927 Fax:+44 865 272923] University of Oxford, Atmospheric, Oceanic and Planetary Physics, Clarendon Laboratory, Parks Road, Oxford OX1 3PU, United Kingdom. Preferred Email: catling@atm.ox.ac.uk (janet) catling@isams.dnet.nasa.gov (internet) My Law of Optimism:"The sooner you fall behind, The more time to catch up" ................................................................................
Re: Ohmic contacts to n-type silicon
Author: 5916rahmank
Date: Tue, 08 Sep 1992 18:10
Date: Tue, 08 Sep 1992 18:10
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In article <1992Sep7.153215.8703@vax.oxford.ac.uk>, atmdcc@vax.oxford.ac.uk writes: |>Does anyone know of a good method of making an ohmic contact to n-type >silicon? |> |>What I'm looking for is a simple evaporation/ sputtering technique to |>deposit a |>metal or alloy down onto the silicon which avoids the unnecessary complication |>of having to selectively dope a particular region. The metal-semiconductor |>should not form a diode and the metal should adhere properly. |> |>I've looked at some literature and whilst there's plenty of theoretical info |>about energy bands, Fermi levels, and so on, there's scant detail of what you |>do in practice. |>-- |>................................................................................ |> David Catling [Tel:+44 865 272927 Fax:+44 865 272923] We have used AuPd and Pt target to sputter contact pad on SnO2 and found good results. I'm not sure if these metals produce non-ohmic contact with Si. You might wanna look into Ben Streetman, and Heinz Henisch. -K. M. A. Rahman.
Re: Ohmic contacts to n-type silicon
Author: sheldon haynie
Date: Thu, 10 Sep 1992 00:24
Date: Thu, 10 Sep 1992 00:24
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Use 0.5% As in Au in an evaporator, to get Ohmic contacts that will stick. You will need to have a donor (n+) concentration > 1e19 to get ohmic reliably with low resistance... BTW you will need to clean the native oxide off in HF either dilute (100:1) in H2O or fumes... email me for details... Sheldon Haynie | Unitrode IC Corp |( this space for rent) 7 Continental Blvd. | Merrimack, NH 03054 | FAX:603-424-3460 |voice:603-424-2410 (EST)| sdh@procad.uicc.com ******************************************************************************
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